Počet záznamů: 1

The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene

  1. 1.
    Kalbáč, Martin - Reina-Cecco, A. - Farhat, H. - Kong, J. - Kavan, Ladislav - Dresselhaus, M. S.
    The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene.
    ACS Nano. Roč. 4, č. 10 (2010), s. 6055-6063 ISSN 1936-0851
    Impakt faktor: 9.855, rok: 2010
    http://hdl.handle.net/11104/0192407