Počet záznamů: 1
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
- 1.0474047 - FZÚ 2018 RIV NL eng J - Článek v odborném periodiku
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications.
Journal of Crystal Growth. Roč. 464, Apr (2017), s. 59-63. ISSN 0022-0248. E-ISSN 1873-5002
Grant CEP: GA MŠMT LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * quantum dot * strain reducing layer * InAs * GaAsSb * InGaAs
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.742, rok: 2017
Trvalý link: http://hdl.handle.net/11104/0271146
Počet záznamů: 1