Počet záznamů: 1
Acquisition of the dopant contrast in semiconductors with slow electrons
- 1.0525062 - ÚPT 2021 RIV NL eng J - Článek v odborném periodiku
Frank, Luděk - Hovorka, Miloš - El Gomati, M. M. - Müllerová, Ilona - Mika, Filip - Mikmeková, Eliška
Acquisition of the dopant contrast in semiconductors with slow electrons.
Journal of Electron Spectroscopy and Related Phenomena. Roč. 241, MAY (2020), č. článku 146836. ISSN 0368-2048. E-ISSN 1873-2526
Grant CEP: GA TA ČR(CZ) TE01020118; GA MŠMT(CZ) LO1212; GA MŠMT ED0017/01/01
GRANT EU: European Commission(XE) 606988 - SIMDALEE2
Institucionální podpora: RVO:68081731
Klíčová slova: semiconductors * dopant contrast * low energy SEM * PEEM * mirror electron microscopy * surface treatments
Obor OECD: Electrical and electronic engineering
Impakt faktor: 1.957, rok: 2020
Způsob publikování: Open access
https://www.sciencedirect.com/science/article/pii/S036820481830135X
Methods available for the mapping of dopants in silicon-based semiconductor structures with p-type as well as n-type doped patterns using low and very-low-energy electrons are reviewed together with the results of demonstration experiments.
Trvalý link: http://hdl.handle.net/11104/0309284
Počet záznamů: 1