The combined technological methods for deposition of Si:H thin films and structures with in situ embedded nanoparticles

0451866 - FZÚ 2017 RIV US eng J - Článek v odborném periodiku
Stuchlík, Jiří - Stuchlíková, The-Ha - Remeš, Zdeněk - Purkrt, Adam - Fajgar, Radek - Koštejn, Martin - Zhuravlev, K. - Kupčík, Jaroslav - Sveshnikova, L. - Galkin, K.N. - Galkin, N.G.
The combined technological methods for deposition of Si:H thin films and structures with in situ embedded nanoparticles.
Advanced Science, Engineering and Medicine. Roč. 7, č. 4 (2015), s. 265-269. ISSN 2164-6627
Grant CEP: GA MŠMT LH12236
Institucionální podpora: RVO:68378271 ; RVO:67985858
Klíčová slova: PECVD * RDE * LA * RLA * VE * PT
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Up to now the deposited thin film structures on the base of hydrogenated silicon (Si:H) by PECVD technique are applied in many devices. Although the quality of Si:H thin films was modified by change of technological parameters and Si:H was studied intensively for many years, the possible applications are still limited. Therefore, we study the combined methods of Si:H thin films deposition with embedded nanoparticles, modify the quality of the Si:H thin films and made them convenient for further applications, for example light emitting diodes (LEDs. Our paper is focused on technology details of deposition of PbS and Mg2Si nanoparticles embedded in a-Si matrix with the emphasis on the in situ deposition without interruption of vacuum process.
Trvalý link: http://hdl.handle.net/11104/0252930