Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering

0443984 - ÚFCH JH 2016 RIV US eng J - Článek v odborném periodiku
Álvarez, M. P. - del Corro, Elena - Morales-García, A. - Kavan, Ladislav - Kalbáč, Martin - Frank, Otakar
Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering.
Nano Letters. Roč. 15, č. 5 (2015), s. 3139-3146. ISSN 1530-6984. E-ISSN 1530-6992
Grant CEP: GA ČR GA14-15357S; GA MŠMT LL1301
Institucionální podpora: RVO:61388955
Klíčová slova: Molybdenum disulfide * band gap engineering * out-of-plane compression
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie
Impakt faktor: 13.779, rok: 2015

Tuning the electronic structure of 2D materials is a very powerful asset toward tailoring their properties to suit the demands of future applications in optoelectronics. Strain engineering is one of the most promising methods in this regard. We demonstrate that even very small out-of-plane axial compression readily modifies the electronic structure of monolayer MoS2. As we show through in situ resonant and nonresonant Raman spectroscopy and photoluminescence measurements combined with theoretical calculations, the transition from direct to indirect band gap semiconductor takes place at ~0.5 GPa, and the transition to a semimetal occurs at stress smaller than 3 GPa.
Trvalý link: http://hdl.handle.net/11104/0246592