Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

0395141 - ÚFE 2014 RIV GB eng J - Článek v odborném periodiku
Grym, Jan - Yatskiv, Roman
Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers.
Semiconductor Science and Technology. Roč. 28, č. 4 (2013). ISSN 0268-1242. E-ISSN 1361-6641
Grant CEP: GA MŠMT LD12014
Institucionální podpora: RVO:67985882
Klíčová slova: Colloidal graphite * Epitaxial growth * Schottky barrier diodes
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 2.206, rok: 2013

Fabrication of high-quality Schottky barriers on InP epitaxial layers prepared by liquid-phase epitaxy from rare-earth treated melts is reported. The Schottky structures are based on metal nanoparticles and a graphite layer deposited from colloidal solutions onto epitaxial layers with varying carrier concentration. The structures have notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi-level pinning. Electrical characteristics of these diodes are shown to be extremely sensitive to the exposure of gas mixtures with small hydrogen content.
Trvalý link: http://hdl.handle.net/11104/0223262