Scanning Electron Microscopy with Samples in an Electric Field

0385193 - ÚPT 2013 RIV CH eng J - Článek v odborném periodiku
Frank, Luděk - Hovorka, Miloš - Mikmeková, Šárka - Mikmeková, Eliška - Müllerová, Ilona - Pokorná, Zuzana
Scanning Electron Microscopy with Samples in an Electric Field.
Materials. Roč. 5, č. 12 (2012), s. 2731-2756. E-ISSN 1996-1944
Grant CEP: GA ČR GAP108/11/2270; GA TA ČR TE01020118; GA MŠMT ED0017/01/01
Institucionální podpora: RVO:68081731
Klíčová slova: scanning electron microscopy * slow electrons * low energy SEM * low energy STEM * cathode lens
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 2.247, rok: 2012

The high negative bias of a sample in a scanning electron microscope constitutes the “cathode lens” with a strong electric field just above the sample surface. This mode offers a convenient tool for controlling the landing energy of electrons down to units or even fractions of electronvolts with only slight readjustments of the column. Moreover, the field accelerates and collimates the signal electrons to earthed detectors above and below the sample, thereby assuring high collection efficiency and high amplification of the image signal. One important feature is the ability to acquire the complete emission of the backscattered electrons, including those emitted at high angles with respect to the surface normal. The cathode lens aberrations are proportional to the landing energy of electrons so the spot size becomes nearly constant throughout the full energy scale. At low energies and with their complete angular distribution acquired, the backscattered electron images offer enhanced information about crystalline and electronic structures thanks to contrast mechanisms that are otherwise unavailable. Examples from various areas of materials science are presented.
Trvalý link: http://hdl.handle.net/11104/0214527