Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction

0364023 - FZÚ 2012 RIV US eng J - Článek v odborném periodiku
Proessdorf, A. - Grosse, F. - Braun, W. - Katmis, F. - Riechert, H. - Romanyuk, Olexandr
Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction.
Physical Review. B. Roč. 83, č. 15 (2011), "155317-1"-"155317-11". ISSN 1098-0121
Grant CEP: GA ČR GPP204/10/P028
Grant ostatní: GermanResearchFoundation(DE) GZ:436TSE113/62/0-1
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: III-V semiconductor surfaces * RHEED * surface reconstruction * MBE
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.691, rok: 2011
http://prb.aps.org/abstract/PRB/v83/i15/e155317

The symmetry and existence ranges of GaSb and AlSb (111) A and B surface reconstructions are investigated using azimuthal-scan reflection high-energy electron diffraction (ARHEED) in a molecular-beam-epitaxy (MBE)environment. ARHEED patterns of all reconstructions within the accessible MBE group V flux-substrate temperature parameter field are presented and analyzed. The transition borders are mapped out as a reference for future growth experiments. The experimental results are interpreted on the basis of general construction principles for (111) surfaces of III-V semiconductors. ARHEED allows the complete determination of the two-dimensional in-plane reciprocal lattice in a single, continuous measurement. This allows the unambiguous identification of the reconstructions on (111) surfaces where the intrinsic symmetry is masked by the 120◦ domain structure and possible disorder.
Trvalý link: http://hdl.handle.net/11104/0199614