Comment on "Current routes in hydrogenated microcrystalline silicon"

0355032 - FZÚ 2011 RIV US eng J - Článek v odborném periodiku
Vetushka, Aliaksi - Fejfar, Antonín - Ledinský, Martin - Rezek, Bohuslav - Stuchlík, Jiří - Kočka, Jan
Comment on "Current routes in hydrogenated microcrystalline silicon".
Physical Review. B. Roč. 81, č. 23 (2010), 237301/1-237301/4. ISSN 1098-0121
Grant CEP: GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510; GA AV ČR(CZ) IAA100100902
GRANT EU: European Commission(XE) 240826 - PolySiMode
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: conductive atomic force microscopy * oxidation * microcrystalline silicon
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.772, rok: 2010

We show that local currents observed by the conductive atomic force microscopy (C-AFM) of silicon thin films measured in ambient atmosphere are generally limited by surface oxide, either native or created by the measurement itself in a process of local anodic oxidation. The tip-induced oxidation changes character of the local current maps, either in repeated scans or even in the first scan of a pristine surface. In particular, the preoxidation of the neighboring scan lines leads to the appearance of grain edges as conductive rings, previously interpreted as an evidence of the main transport route at the grain boundaries in microcrystalline silicon. We also show that stripping of the surface oxide by HF etch restores the local currents to the values corresponding to C-AFM done in ultra-high-vacuum on in situ deposited samples.
Trvalý link: http://hdl.handle.net/11104/0193885