Determination of proximity effect forward scattering range parameter in e-beam lithography

0350671 - ÚPT 2011 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Urbánek, Michal - Kolařík, Vladimír - Král, Stanislav - Dvořáková, Marie
Determination of proximity effect forward scattering range parameter in e-beam lithography.
Proceedings of the 12th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. Brno: Institute of Scientific Instruments AS CR, v.v.i, 2010 - (Mika, F.), s. 67-68. ISBN 978-80-254-6842-5.
[International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /12./. Skalský dvůr (CZ), 31.05.2010-04.06.2010]
Grant CEP: GA MPO FR-TI1/576; GA MŠMT ED0017/01/01
Výzkumný záměr: CEZ:AV0Z20650511
Klíčová slova: electron beam lithography * proximity effect
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
http://arl-repository.lib.cas.cz/uloziste_av/UPT-D/cav_un_epca-0350671_01.pdf

Electron beam lithography (EBL) is a tool for generation patterns with high resolution, so it is necesessary to control critical dimensions of created patterns, because the undesired influence of adjacent regions to those exposed can occur due to the proximity effect. Proximity effect is often described by two Gaussian function, where .alpha. represents forward scattering range parameter. Consequently, we present evaluation of proximity parameter .alpha. by various method in this paper.
Trvalý link: http://hdl.handle.net/11104/0190611