Relation of nanoscale and macroscopic properties of mixed-phase silicon thin films

0347825 - FZÚ 2011 RIV DE eng J - Článek v odborném periodiku
Fejfar, Antonín - Vetushka, Aliaksi - Kalusová, V. - Čertík, Ondřej - Ledinský, Martin - Rezek, Bohuslav - Stuchlík, Jiří - Kočka, Jan
Relation of nanoscale and macroscopic properties of mixed-phase silicon thin films.
Physica Status Solidi A. Roč. 207, č. 3 (2010), s. 582-586. ISSN 1862-6300. E-ISSN 1862-6319
Grant CEP: GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510; GA AV ČR(CZ) IAA100100902
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: conductive atomic force microscopy (C-AFM) * mixed phase silicon thin films
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.458, rok: 2010
http://dx.doi.org/10.1002/pssa.200982907

Conductive atomic force microscopy (C-AFM) can be used to probe the structure and local conductivity of the mixed phase silicon thin films with nanometer resolution. Effective medium approximations (EMAs) were used to relate the nanoscale properties with macroscopic properties for the dark conductivity. Comparison of the percolation threshold predicted by different EMAs show correlation of the structure, with resistive amorphous phase coating the conductive grains. In sandwich structures (e.g. solar cells) local fields may play important role: concentration of both optical and electrical internal fields to the tips of spherically capped conical microcrystalline grains. Adaptive higher-order polynomial finite-element methods (FEMs) were used to calculate the internal field distributions in the C-AFM. The values agree with the experimental C-AFM.
Trvalý link: http://hdl.handle.net/11104/0188510