Analysis of the resonant tunneling diode with the stepped pre-barrier

0346107 - ÚFE 2011 RIV GB eng J - Článek v odborném periodiku
Yatskiv, Roman - Voves, J.
Analysis of the resonant tunneling diode with the stepped pre-barrier.
Journal of Physics: Conference Series. Roč. 193, č. 1 (2009), s. 1-4. ISSN 1742-6588. E-ISSN 1742-6596.
[16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructure. Monpellier, 24.8.2009 – 28.8.2009]
Grant CEP: GA AV ČR KJB200670901; GA AV ČR(CZ) KAN401220801
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: Resonant tunneling diodes * Nonequilibrium Green functions * Hysteresis
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Resonant-tunnelling diodes (RTD) incorporating an emitter stepped pre-barrier are studied both theoretically and experimentally. The simulation of I-V characteristics of modified AlAs-GaAs double barrier RTD grown by molecular beam epitaxy with the stepped pre-barrier is presented. An 1D quantum transport simulator Wingreen based on the nonequilibrium Green functions (NEGF) is used in our case. Our result show that the coupling between energy levels in the emitter quantum-well and the main quantum well leads to the plateau behaviour of the I-V curves. The two plateau regions on the I-V characteristics have been observed in experimental and simulation results.
Trvalý link: http://hdl.handle.net/11104/0187215