Films of Metal Nanoparticles Deposited on Semiconductors by Electrophoresis: Technology and Characterization

0346028 - ÚFE 2011 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Žďánský, Karel - Zavadil, Jiří - Kacerovský, Pavel - Kostka, František - Lorinčík, Jan - Černohorský, O. - Fojtík, A. - Müller, M. - Kostejn, M.
Films of Metal Nanoparticles Deposited on Semiconductors by Electrophoresis: Technology and Characterization.
NANOCON 2009 Conference Proceedings. Ostrava: TANGER, 2009, s. 171-178. ISBN 978-80-87294-13-0.
[NANOCON 2009. Rožnov pod Radhoštěm (CZ), 20.10.2009-22.10.2009]
Grant CEP: GA AV ČR(CZ) KAN401220801; GA ČR GA102/09/1037
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: semiconductor devices * nanostructures * sensors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Layers of nanoparticles in micelle enclosures were deposited on InP substrates by electrophoresis from isooctane colloid solutions containing Pd or Ag nanoparticles. The layers were investigated by SIMS, low-temperature photoluminescence spectroscopy and topography, absorption spectroscopy, Raman spectroscopy and sensitivity to hydrogen. Photoluminescence of InP was enhanced by the layers of Pd or Ag nanoparticles. Schottky barriers made on the n-type InP with layers containing Pd nanoparticles showed significant sensitivity to hydrogen in contrast to those containing Ag nanoparticles.
Trvalý link: http://hdl.handle.net/11104/0187160