Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE

0341441 - ÚFE 2010 RIV NL eng J - Článek v odborném periodiku
Vaniš, Jan - Zelinka, Jiří - Malina, Václav - Henini, M. - Pangrác, Jiří - Melichar, Karel - Hulicius, Eduard - Šroubek, Filip - Walachová, Jarmila
Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE.
Microelectronics Journal. Roč. 40, č. 3 (2009), s. 496-498. ISSN 0026-2692. E-ISSN 1879-2391
Grant CEP: GA ČR GA202/05/0242
Výzkumný záměr: CEZ:AV0Z20670512; CEZ:AV0Z10100521; CEZ:AV0Z10750506
Klíčová slova: quantum dots * ballistic transport * semiconductor heterojunction
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.778, rok: 2009

Self-assembled InAs quantum dots (SAQDs) in GaAs/GaAlAs structures grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) of similar size was examined by ballistic electron emission spectroscopy. Ballistic current-voltage characteristics through the QD in the voltage range from 0.55 to 0.9 V (range where the presence of resonance states of QD is expected) with its derivative (the derivation of the spectroscopic characteristics represents quantum levels in the QD) are given. Differences in the intensities and sharpnesses of the QD levels for MBE and MOVPE grown QDs are observed.
Trvalý link: http://hdl.handle.net/11104/0184437