ArF Laser -Induced Chemical Vapour Deposition of Polythiene Films from Carbon Disulfide

0181697 - UFCH-W 20030128 RIV US eng J - Článek v odborném periodiku
Tomovska, R. - Bastl, Zdeněk - Vorlíček, Vladimír - Vacek, Karel - Šubrt, Jan - Plzák, Zbyněk - Pola, Josef
ArF Laser -Induced Chemical Vapour Deposition of Polythiene Films from Carbon Disulfide.
Journal of Physical Chemistry. B. Roč. 107, č. 36 (2003), s. 9793-9801. ISSN 1089-5647
Grant CEP: GA MŠMT ME 612
Výzkumný záměr: CEZ:AV0Z4032918; CEZ:AV0Z4040901
Klíčová slova: laser photolysis * ArF * chemical vapour deposition
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie
Impakt faktor: 3.679, rok: 2003

Laser photolysis at 193 nm of gaseous carbon disulfide into CS and S in the absence and excess of N2 is controlled by 2 photon-induced depletion of CS2 and affords chemical vapour deposition of (CS)n polymer and Sn. The proposed polymerization mechanism of CS is explained by an intermediacy of C2S2 species. The (CS)n polymer contains S-centred radicals that are stable in air and withstand heating in H2 atmosphere. Its structure is contributed by >C=S, >C=C<, S2C=CS2,, -C-(C=S)-S-), (-S-(C=S)-S- and C-S-S-C configurations whose relative extent depends on irradiation conditions: more C=S bonds (and less C-S bonds) are formed at higher CS2 pressure, in the excess of N2 and with lower laser fluences. The extent of the S2C=CS2 units decreases, and that of >C=C< units increases, upon mild polymer heating. The polymer deposited in the absence of N2 consists of unique 100-200 nm-sized hollow spheres.
Trvalý link: http://hdl.handle.net/11104/0078229