Počet záznamů: 1
Characterization of InAs/AlSb tunelling double barrier heterostructure by reverse electron emission spectroscopy with InAs as base electrode
- 1.0000388 - ÚFE 2005 RIV DE eng J - Článek v odborném periodiku
Vaniš, Jan - Chow, D. H. - Šroubek, Filip - McGill, T. C. M. - Walachová, Jarmila
Characterization of InAs/AlSb tunelling double barrier heterostructure by reverse electron emission spectroscopy with InAs as base electrode.
[Charakterizace InAs/AlSb dvojite tunelove barierove heterostruktury.]
Physica Status Solidi C. Roč. 2, č. 4 (2005), s. 1444-1448. ISSN 1610-1634.
[EXMATEC 2004 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /7./. Montpellier, 01.06.2004-04.06.2004]
Grant CEP: GA AV ČR(CZ) KSK1010104
Klíčová slova: scanning tunnelling microscopy * ballistic transport * semiconductor heterojunctions
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0017652
Počet záznamů: 1