MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm

ZÍKOVÁ, M., HOSPODKOVÁ, A., PANGRÁC, J., OSWALD, J., KRČIL, P., HULICIUS, E., KOMNINOU, P., KIOSEOGLOU, J. MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm. Journal of Crystal Growth. 2015, 414(Mar), 167-171. ISSN 0022-0248. E-ISSN 1873-5002. Dostupné z: doi: 10.1016/j.jcrysgro.2014.09.053