GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission

HOSPODKOVÁ, A., PANGRÁC, J., OSWALD, J., KULDOVÁ, K., VYSKOČIL, J., HULICIUS, E., HAZDRA, P. GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission. In: PRAZMOWSKA, J., ed. EWMOVPE XIV. Wroclaw: Printing house of Wroclaw University of Technology, 2011, s. 105-108. ISBN 978-83-7493-599-9.