Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments

HARA, K., AFFOLDER, A.A., ALLPORT, P.P., BATES, R., BETANCOURT, C., BÖHM, J., BROWN, H., BUTTAR, C., CARTER, J. R., CASSE, G., MIKEŠTÍKOVÁ, M. Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments. Nuclear Instruments & Methods in Physics Research Section A. 2011, 636(1), "S83"-"S89". ISSN 0168-9002. E-ISSN 1872-9576. Dostupné z: doi: 10.1016/j.nima.2010.04.090.