Development of n-on-p silicon sensors for very high radiation environments

UNNO, Y., AFFOLDER, A.A., ALLPORT, P.P., BATES, R., BETANCOURT, C., BÖHM, J., BROWN, H., BUTTAR, C., CARTER, J. R., CASSE, G., MIKEŠTÍKOVÁ, M. Development of n-on-p silicon sensors for very high radiation environments. Nuclear Instruments & Methods in Physics Research Section A. 2011, 636(1), "S24"-"S30". ISSN 0168-9002. E-ISSN 1872-9576. Dostupné z: doi: 10.1016/j.nima.2010.04.080.