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Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
- 1.MIKHAILOVA, M. P., IVANOV, E.V., MOISEEV, K. D., YAKOVLEV, Y. P., HULICIUS, E., HOSPODKOVÁ, A., PANGRÁC, J., ŠIMEČEK, T. Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface. Semiconductors. 2010, 44(1), 66-71. ISSN 1063-7826. E-ISSN 1090-6479. Dostupné z: doi: 10.1134/S1063782610010100
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