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Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs
- 1.HAZDRA, P., OSWALD, J., KOMARNITSKYY, V., KULDOVÁ, K., HOSPODKOVÁ, A., HULICIUS, E., PANGRÁC, J. Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs. Superlattices and Microstructures. 2009, 46(1-2), 324-327. ISSN 0749-6036. E-ISSN 1096-3677. Dostupné z: doi: 10.1016/j.spmi.2008.12.002
Počet záznamů: 1