GaN:Co epitaxial layers grown by MOVPE

0456264 - FZÚ 2016 RIV NL eng J - Článek v odborném periodiku
Šimek, P. - Sedmidubský, D. - Klímová, K. - Mikulics, M. - Maryško, Miroslav - Veselý, M. - Jurek, Karel - Sofer, Z.
GaN:Co epitaxial layers grown by MOVPE.
Journal of Crystal Growth. Roč. 44, Mar (2015), 62-68. ISSN 0022-0248. E-ISSN 1873-5002
Grant CEP: GA ČR GA13-20507S
Institucionální podpora: RVO:68378271
Klíčová slova: doping * metalorganic vapor phase epitaxy * cobalt * gallium compounds * nitrides * magnetic materials spintronics
Kód oboru RIV: CA - Anorganická chemie
Impakt faktor: 1.462, rok: 2015

We present a growth of GaN layers doped by cobalt using low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates.The in situ doping of GaN by Co was performed by the decomposition of bis(cyclopentadienyl)cobalt precursor.Three parameters,the temperature and pressure of the deposition and the Ga/Co ratio in the gas phase,influencing cobalt concentration were investigated.The obtained results were confronted with the thermodynamic predictions of Co solubility within GaN lattice and electronic structure calculations of GaN:Co.ThemagneticpropertiesofGaN:Co thin films were investigated using superconducting quantum interference device magnetometer.In addition, the layers were characterized by Raman and photoluminescence spectroscopy and atomic force microscopy.
Trvalý link: http://hdl.handle.net/11104/0256820