Low temperature delayed recombinationand trap tunneling

0448026 - FZÚ 2016 RIV GB eng J - Článek v odborném periodiku
Mihóková, Eva - Schulman, L. S.
Low temperature delayed recombinationand trap tunneling.
Journal of Physics-Condensed Matter. Roč. 27, č. 7 (2015), 1-8. ISSN 0953-8984. E-ISSN 1361-648X
Grant ostatní: AVČR(CZ) M100101212
Institucionální podpora: RVO:68378271
Klíčová slova: scintillator * tunneling * traps
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.209, rok: 2015

Delayed recombination of charge carriers at an activator is a significant problem for fast scintillators and is usually associated with thermal effects. However, experimental results have shown that this phenomenon can occur even at the lowest temperatures. We here provide evidence in support of the idea that this is due to quantum tunneling between activator and nearby traps, and provide analytic estimates relating the energy levels and locations of those traps to the observed delayed recombination. Several calculations are devoted to showing that deviations from the simplest estimates in fact do not occur. Moreover, these estimates are consistent with lower dimensional numerical calculations for a physically significant range of trap distances. In two examples involving the activator Pr, the formulas developed are used to give the locations of traps based on likely values of trap energy depth.
Trvalý link: http://hdl.handle.net/11104/0249770