Luminescence and origin of lead-related centers in single crystalline films of Y.sub.2./sub.SiO.sub.5./sub. and Lu.sub.2./sub.SiO.sub.5./sub..

0396529 - FZÚ 2014 RIV GB eng J - Článek v odborném periodiku
Babin, Vladimir - Gorbenko, V. - Krasnikov, A. - Mihóková, Eva - Nikl, Martin - Zazubovich, S. - Zorenko, Y.
Luminescence and origin of lead-related centers in single crystalline films of Y₂SiO₅ and Lu₂SiO₅.
Radiation Measurements. Roč. 56, Sept (2013), s. 124-128. ISSN 1350-4487. E-ISSN 1879-0925
Grant CEP: GA ČR GAP204/12/0805; GA AV ČR IAA100100810
Institucionální podpora: RVO:68378271
Klíčová slova: luminescence * oxyorthosilicates * single crystalline films
Kód oboru RIV: BH - Optika, masery a lasery
Impakt faktor: 1.140, rok: 2013

In the temperature range 4.2-350 K, the steady-state and time-resolved emission and excitation spectra and luminescence decay kinetics are studied for the undoped Y2SiO5 and Lu2SiO5 single crystalline films grown by liquid phase epitaxy method from the PbO-based flux and, owing to that, containing lead ions substituting for Y3+ or Lu3+ ions. Luminescence characteristics of Pb-related centers of different types are identified. On the basis of the results obtained, we suggest that the ultraviolet emission of Pb-related centers arises from the Pb2+ ions substituting for Y3+ or Lu3+ ions in the Y1 and Lu1 lattice sites of the X2 structure. Possible hypotheses on the origin of the intense complex lead-related blue emission are discussed. We propose phenomenological models describing the excited-state dynamics of the studied luminescence centers.
Trvalý link: http://hdl.handle.net/11104/0224289