Particle detectors based on InP Schottky diodes

0387285 - ÚFE 2013 RIV GB eng J - Článek v odborném periodiku
Yatskiv, Roman - Grym, Jan
Particle detectors based on InP Schottky diodes.
Journal of Instrumentation. Roč. 10, č. 7 (2012), C100051-C100055. ISSN 1748-0221. E-ISSN 1748-0221
Grant CEP: GA MŠMT(CZ) OC10021; GA MŠMT LD12014
Institucionální podpora: RVO:67985882
Klíčová slova: Particle detector * High purity InP layer * Schottky diode
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 1.656, rok: 2012

A study of electrical properties and detection performance of Indium Phosphide detector structures with Schottky contacts prepared on high purity p-type InP was performed. Schottky barrier detectors were prepared by vacuum evaporation of Pd on p-type epitaxial layers grown on Zn-doped p-type substrates. The detection performance of the detectors was characterized by the measurement of pulse-height spectra with alpha particles emitted from 241Am source at room temperature. The influence of the quality of p-type epitaxial layers on the charge-collection efficiency and energy resolution in the full-width half-maximum is discussed
Trvalý link: http://hdl.handle.net/11104/0220242