Unconventional Imaging with Backscattered Electrons

0367773 - ÚPT 2012 RIV US eng J - Článek v odborném periodiku
Müllerová, Ilona - Mikmeková, Šárka - Hovorka, Miloš - Frank, Luděk
Unconventional Imaging with Backscattered Electrons.
Microscopy and Microanalysis. Roč. 17, Suppl. 2 (2011), s. 900-901. ISSN 1431-9276. E-ISSN 1435-8115
Výzkumný záměr: CEZ:AV0Z20650511
Klíčová slova: SEM * low energies * grain contrast * dopant contrast * internal stress
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 3.007, rok: 2011

Immesrsion of the sample in a scanning electron microscope to strong electric field enables one to acquire the backscattered electrons (BSE) throughout full energy and angle range of emission. BSE emitted at high angles off the surface normal provide extended crystallographic information with high grain contrast sensitive to details including visualization of the internal stress. At very low energies the BSE yield may serve as fingerprinting the grain orientation. The dopant contrast can be obtained via injection of very slow electrons.
Trvalý link: http://hdl.handle.net/11104/0202327