Raman 2D-Band Splitting in Graphene: Theory and Experiment

0358511 - ÚFCH JH 2012 RIV US eng J - Článek v odborném periodiku
Frank, Otakar - Mohr, M. - Maultzsch, J. - Thomsen, Ch. - Riaz, I. - Jalil, R. - Novoselov, K. S. - Tsoukleri, G. - Parthenios, J. - Papagelis, K. - Kavan, Ladislav - Galiotis, C.
Raman 2D-Band Splitting in Graphene: Theory and Experiment.
ACS Nano. Roč. 5, č. 3 (2011), s. 2231-2239. ISSN 1936-0851. E-ISSN 1936-086X
Grant CEP: GA MŠMT LC510; GA AV ČR IAA400400804; GA AV ČR KAN200100801
Výzkumný záměr: CEZ:AV0Z40400503
Klíčová slova: graphene * Raman spectroscopy * tensile strain * 2D mode
Kód oboru RIV: CG - Elektrochemie
Impakt faktor: 10.774, rok: 2011

We present a systematic experimental and theoretical study of the two-phonon (2D) Raman scattering in graphene under uniaxial tension. The external perturbation unveils that the 2D mode excited with 785 nm has a complex line-shape mainly due to the contribution of two distinct double resonance scattering processes (inner and outer) in the Raman signal. The splitting depends on the direction of the applied strain and the polarization of the incident light. The results give new insight into the nature of the 2D band and have significant implications for the use of graphene as reinforcement in composites since the 2D mode is crucial to assess how effectively graphene uptakes an applied stress or strain.
Trvalý link: http://hdl.handle.net/11104/0196533