Toward surface-friendly treatment of seeding layer and selected-area diamond growth

0354793 - FZÚ 2011 RIV DE eng J - Článek v odborném periodiku
Babchenko, Oleg - Ižák, Tibor - Ukraintsev, Egor - Hruška, Karel - Rezek, Bohuslav
Toward surface-friendly treatment of seeding layer and selected-area diamond growth.
Physica Status Solidi B. Roč. 247, 11-12 (2010), s. 3026-3029. ISSN 0370-1972. E-ISSN 1521-3951
Grant CEP: GA AV ČR KAN400100701; GA AV ČR(CZ) KAN400480701; GA MŠMT LC510; GA AV ČR(CZ) IAAX00100902; GA MŠMT(CZ) 1M06002
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: diamond structuring * lithography * reactive ion etching * selected-area deposition
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.344, rok: 2010

Several technological approaches of applying photoresistive polymer for patterning the diamond seeding layer while minimizing damage of substrate surface is reported. Reactive ion etching (i.e., dry process) and wet photolithographical processing using two polymer layers are compared and combined as treatment techniques. Subsequently, diamond structures are deposited by microwave plasma enhanced chemical vapor deposition from a gas mixture of methane diluted in hydrogen. The highest efficiency for selected-area deposition, with the parasitic density as low as the technological limit of 105 cm−2, was achieved by combining the two treatment techniques. Technological advantages and limitation of dry and wet treatment process are pointed out.
Trvalý link: http://hdl.handle.net/11104/0193711