Počet záznamů: 1

The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene

  1. 1.
    Kalbáč, Martin, Reina-Cecco, A., Farhat, H., Kong, J., Kavan, Ladislav, Dresselhaus, M. S. The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene. ACS Nano. 2010, roč. 4, č. 10, s. 6055-6063. ISSN 1936-0851.