Počet záznamů: 1

The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene

  1. 1.
    Kalbáč, Martin; Reina-Cecco, A.; Farhat, H.; Kong, J.; Kavan, Ladislav; Dresselhaus, M. S. The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene. ACS Nano 2010, roč. 4, č. 10, s. 6055-6063. ISSN 1936-0851.