Impact of Pr on the properties of InP based layers for light sources and detectors

0346171 - ÚFE 2011 RIV DE eng C - Konferenční příspěvek (zahraniční konf.)
Procházková, Olga - Grym, Jan - Zavadil, Jiří - Žďánský, Karel - Yatskiv, Roman
Impact of Pr on the properties of InP based layers for light sources and detectors.
PHYSICA STATUS SOLIDI. Vol. C. WEINHEIM: WILEY, 2009 - (Correia, A.; Saenz, J.; Ordejon, P.), s. 2801-2803. C-Current Topics in Solid State Physics, 6, 10. ISSN 1610-1634.
[15th International Semiconducting and Insulating Materials Conference (SIMC-XV). Vilnius (LT), 15.06.2009-19.06.2009]
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: detection * radiation
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

We report the optimization of LPE growth technique for the preparation of InP and GaInAsP high quality and high purity layers by using Pr purification effect. We have found that Pr addition into the growth melt leads to the reduction of the layer defect density by a half order of magnitude and carrier concentrations diminished to 10(14) cm(-3). Three types of p-n junction based radiation detection structures were prepared and their detection performance was assessed by using alpha-particles emitted from the Am-241 radioactive source. The type Ill structure, utilizing the p-n junction with both components grown with Pr addition, exhibits the highest charge collection efficiency.
Trvalý link: http://hdl.handle.net/11104/0187265