Optical evidence of strong coupling between valence-band holes and d-localized spins in Zn.sub.1-x./sub.Mn.sub.x./sub.O

0345680 - FZÚ 2011 RIV US eng J - Článek v odborném periodiku
Sokolov, V.I. - Druzhinin, A.V. - Gruzdev, N.B. - Dejneka, Alexandr - Churpita, Olexandr - Hubička, Zdeněk - Jastrabík, Lubomír - Trepakov, Vladimír
Optical evidence of strong coupling between valence-band holes and d-localized spins in Zn_1-xMn_xO.
Physical Review. B. Roč. 81, č. 15 (2010), 153104/1-153104/4. ISSN 1098-0121
Grant CEP: GA ČR GC202/09/J017; GA AV ČR KJB100100703; GA AV ČR KAN301370701; GA MŠMT(CZ) 1M06002
Výzkumný záměr: CEZ:AV0Z10100522
Klíčová slova: Zn_1-xMn_xO thin films * absorption edge * localized Zhang-Rice-type state into the band gap
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.772, rok: 2010

We report on optical-absorption study of Zn1-xMnxO (x=0–0.06) films on fused silica substrates taking special attention to the spectral range of the fundamental absorption edge (3.1–4 eV). Well-pronounced excitonic lines observed in the region 3.40–3.45 eV were found to shift to higher energies with increasing Mn concentration. The optical band-gap energy increases with x too, reliably evidencing strong coupling between oxygen holes and localized spins of manganese ions. In the 3.1–3.3 eV region the optical-absorption curve in the manganese-contained films was found to shift to lower energies with respect to that for undoped ZnO. The additional absorption observed in this range is interpreted as a result of splitting of a localized Zhang-Rice-type state into the band gap.
Trvalý link: http://hdl.handle.net/11104/0186891