Profiling N-Type Dopants in Silicon

0340745 - ÚPT 2010 RIV JP eng J - Článek v odborném periodiku
Hovorka, Miloš - Mika, Filip - Mikulík, P. - Frank, Luděk
Profiling N-Type Dopants in Silicon.
Materials Transactions. Roč. 51, č. 2 (2010), s. 237-242. ISSN 1345-9678. E-ISSN 1347-5320
Grant CEP: GA ČR GP102/09/P543; GA AV ČR IAA100650803
Výzkumný záměr: CEZ:AV0Z20650511
Klíčová slova: silicon * dopant contrast * photoemission electron microscopy * scanning electron microscopy
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 0.779, rok: 2010
http://www.jim.or.jp/journal/e/51/02/237.html

Variously doped n-type structures (dopant concentration between 1.5x10e16 cm-3 and 1.5x10e19 cm-3) on a lightly doped p-type silicon substrate (doped to 1.9x10e15 cm-3) have been examined by a photoemission electron microscope equipped with a high-pass energy filter and by an ultra-high vacuum scanning low energy electron microscope. High contrast have been observed between the n-type areas and the p-type substrate and its monotone dependency on the doping level of structures has been manifested. The relation between the energy spectra of photoelectrons and the doping level has been studied, too. The scanning electron microscope images obtained with the landing energy of the primary beam in the low keV range exhibit contrasts similar to those appearing in the full threshold photoemission micrographs.
Trvalý link: http://hdl.handle.net/11104/0183926