Ab initio study of GaSb(001)-c(2 x 10) and (2 x 10) reconstructions

0337603 - FZÚ 2010 RIV JP eng J - Článek v odborném periodiku
Romanyuk, Olexandr - Braun, W. - Grosse, F.
Ab initio study of GaSb(001)-c(2 x 10) and (2 x 10) reconstructions.
[Ab initio studium GaSb(001)-c(2 x 10) and (2 x 10) rekonstrukce.]
e-Journal of Surface Science and Nanotechnology. Roč. 7, - (2009), 429-431. ISSN 1348-0391
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: density functional calculations * surface energy * surface relaxation and reconstruction * gallium antimonide * semiconducting surfaces
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

GaSb(001) surface reconstructions with the experimentally observed (2 x10) and c(2x10) symmetry are investigated employing density functional theory. Special attention is given to the incorporation of Ga atoms during the initial steps of growth.

GaSb(001) (2x10) a c(2x10) rekonstrukce a inkorporace atomu Ga během MBE růstu byly studovány ab initio metodou na základě density-functional teorie.
Trvalý link: http://hdl.handle.net/11104/0181560