Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment

0361395 - FZÚ 2013 RIV NL eng J - Článek v odborném periodiku
Böhm, Jan - Mikeštíková, Marcela - Affolder, A.A. - Allport, P.P. - Bates, R. - Betancourt, C. - Brown, H. - Buttar, C. - Carter, J. R. - Casse, G. … celkem 73 autorů
Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 636, č. 1 (2011), "S104"-"S110". ISSN 0168-9002. E-ISSN 1872-9576
Grant CEP: GA MŠMT LA08032
Výzkumný záměr: CEZ:AV0Z10100502
Klíčová slova: silicon * micro-strip * ATLAS ID upgrade * SLHC * leakage current * depletion voltage * electrical characteristics * coupling capacitance
Kód oboru RIV: BF - Elementární částice a fyzika vys. energií
Impakt faktor: 1.207, rok: 2011
http://dx.doi.org/10.1016/j.nima.2010.04.093

The ATLAS collaboration R&D group "Development of n-in-p Silicon Sensors for very high radiation environment" has developed single-sided p-type 9.75cm x 9.75cm sensors with an n-type readout strips having radiation tolerance against the 10^15 1-MeV neutron equivalent (neq)/cm^2 fluence expected in the Super Large Hadron Collider. The compiled results of an evaluation of the bulk and strip parameter characteristics of 19 new non-irradiated sensors manufactured by Hamamatsu Photonics are presented in this paper. It was verified in detail that the sensors comply with the technical specifications required before irradiation. No openings, shorts, or pinholes were observed on all tested strips, confirming the high quality of sensors made by Hamamatsu Photonics.
Trvalý link: http://hdl.handle.net/11104/0198716