MO CVD growth of ZnO with different growth rate

0356074 - ÚFE 2012 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Nohavica, Dušan - Gladkov, Petar - Grym, Jan - Jarchovský, Zdeněk
MO CVD growth of ZnO with different growth rate.
Conference Proceedings ASDAM 2010. Piscataway: IEEE, 2010 - (Breza, J.; Donoval, D.), s. 187-190. ISBN 978-1-4244-8574-1.
[ASDAM 2010 - The Eighth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice (SK), 25.10.2010-27.10.2010]
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: ZnO * MOCVD * Growth rate
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Apparatus combining N2O plasma, DEZn transported in argon and UV irradiation of the deposition zone has been used. Vapor pressure during deposition was stabilised in the range 10 to 20 torr. ZnO layers were deposited on Si (100) and GaP (111) substrates. Growth rate changes in the range 2 to 90 μm/hour. Surface morphology at smaller growth rate was regular nanowalls type. More complex morphology, containing longer microrods and pyramids was obtained at high growth rate. Best sample grown at growth rate 80μm/hour demonstrate FWHM of the bound exciton peak ~4meV.
Trvalý link: http://hdl.handle.net/11104/0194693