Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction

0354219 - FZÚ 2011 RIV US eng J - Článek v odborném periodiku
Holý, V. - Martí, X. - Horák, L. - Caha, O. - Novák, Vít - Cukr, Miroslav - Schülli, T. U.
Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction.
Applied Physics Letters. Roč. 97, č. 18 (2010), 181913/1-181913/3. ISSN 0003-6951. E-ISSN 1077-3118
GRANT EU: European Commission(XE) 214499 - NAMASTE
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: Mn ions * x-ray diffraction * GaAs lattice
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.820, rok: 2010

Densities of Mn ions in epitaxial layers of (Ga,Mn)As were determined by anomalous x-ray diffraction, i.e., by a measurement of the dependence of the intensity of weak diffraction 002 on the photon energy around the Mn K absorption edge. From the measured data it was possible to determine the density of Mn ions in substitutional positions and the difference in the Mn densities in two possible interstitial positions in the GaAs lattice. The data demonstrate that the rate of the out-diffusion of the Mn interstitials from the Ga tetrahedrons significantly exceeds that from the As tetrahedrons.
Trvalý link: http://hdl.handle.net/11104/0193270