Počet záznamů: 1
Ab initio study of one-dimensional disorder on III-V semiconductor surfaces
- 1.0349214 - FZÚ 2011 RIV DE eng J - Článek v odborném periodiku
Romanyuk, Olexandr - Grosse, F. - Braun, W.
Ab initio study of one-dimensional disorder on III-V semiconductor surfaces.
Physica Status Solidi C. Roč. 7, č. 2 (2010), s. 330-333. ISSN 1862-6351
Grant CEP: GA AV ČR KAN300100802
Grant ostatní: German Resarch Fondation(DE) GZ:436 TSE 113/62/0-1
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: atomic disorder * ab initio * semiconductor * reconstruction
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Atomic disorder on GaSb(001) and GaAs(001) surfaces is studied by ab initio calculations within density functional theory (DFT). Surface energies are computed for GaSb(001)and GaAs(001) reconstructions. Deviations in bond lengths due to disorder with respect to the ordered ground state phases are calculated.
Trvalý link: http://hdl.handle.net/11104/0189514
Počet záznamů: 1