Počet záznamů: 1
Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
- 1.0342123 - FZÚ 2011 RIV RU eng J - Článek v odborném periodiku
Mikhailova, M. P. - Ivanov, E.V. - Moiseev, K. D. - Yakovlev, Yu. P. - Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Šimeček, Tomislav
Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface.
Semiconductors. Roč. 44, č. 1 (2010), 66-71. ISSN 1063-7826. E-ISSN 1090-6479
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: electroluninescence * MOVPE * GaSb * InAs * quantum well
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.603, rok: 2010
Luminescent characteristics of asymmetric p-InAs/AlSb/InAsSb/AlSb/p-GaSb type II heterostructures with deep quantum wells at the heterointerface grown by MOVPE are studied. Intense positive and negative luminescence was observed in the range of photon energies of 0.3-0.4 eV with a forward and reverse bias, respectively. The suggested heterostructures can be used as lightemitting diodes (photodiodes) with switched positive and negative luminescence in the mid-IR spectral range of 3-4 μm.
Trvalý link: http://hdl.handle.net/11104/0184942
Počet záznamů: 1