Fine tuning of optical transition energy of twisted bilayer graphene via interlayer distance modulation

0471907 - ÚFCH JH 2018 RIV US eng J - Článek v odborném periodiku
del Corro, Elena - Peňa-Álvarez, Miriam - Sato, K. - Morales-García, A. - Bouša, Milan - Mračko, Michal - Kolman, Radek - Pacáková, Barbara - Kavan, Ladislav - Kalbáč, Martin - Frank, Otakar
Fine tuning of optical transition energy of twisted bilayer graphene via interlayer distance modulation.
Physical Review B. Roč. 95, č. 8 (2017), č. článku 085138. ISSN 2469-9950. E-ISSN 2469-9969
Grant CEP: GA ČR GA14-15357S; GA MŠMT LL1301; GA ČR GA16-03823S
Institucionální podpora: RVO:61388955 ; RVO:61388998 ; RVO:68378271
Klíčová slova: twisted bilayer graphene * tuning * silicon
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.813, rok: 2017

Since the advent of graphene, tuning of its electronic
structure has been one of the strongest focal points for many
researchers. However, so far the vision of exploiting the
unique properties of graphene for the replacement of silicon
in electronics has been hampered by the inability to open a
sizable band gap in a simple, controlled, and cost-effective
manner [1]. For this purpose, bilayer graphene (BLG) holds
more promise, for applications such as nanoelectronics, than
monolayer graphene, as it offers several routes of profiting
from the interactions between the two layers [2–4], e.g., by
dual gating [4,5], molecular doping [6], or theoretically by
mechanical deformation [7]. Similarly, the appealing concept
of a bilayer pseudospin field effect transistor (BiSFET) still
exists only at the theoretical level [3,8,9]. The interlayer
distance could be one of the important parameters controlling
the excitonic gap in BiSFET [10].
Trvalý link: http://hdl.handle.net/11104/0269281