Preparation of InAs/GaAs quantum dots for BEEM/BEES

0367158 - FZÚ 2012 RIV PL eng C - Konferenční příspěvek (zahraniční konf.)
Hulicius, Eduard - Vaniš, Jan - Pangrác, Jiří - Walachová, Jarmila - Vyskočil, Jan - Oswald, Jiří - Hospodková, Alice
Preparation of InAs/GaAs quantum dots for BEEM/BEES.
EWMOVPE XIV. Wroclaw: Printing house of Wroclaw University of Technology, 2011 - (Prazmowska, J.), s. 263-266. ISBN 978-83-7493-599-9.
[European Workshop on Metalorganic Vapor Phase Epitaxy /14./. Wrocław (PL), 05.06.2011-08.06.2011]
Grant CEP: GA ČR GAP102/10/1201; GA ČR GA202/09/0676; GA ČR GPP102/11/P824
Výzkumný záměr: CEZ:AV0Z10100521; CEZ:AV0Z20670512
Klíčová slova: InAs/GaAs * quantum dots * BEEM/BEES
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Self-assembled InAs/GaAs QD layer embedded in AlGaAs heterostructure was detected by ballistic electron emission microscopy (BEEM). Ballistic current through QDs is much higher than outside of QDs, and QDs look like dark spots. Ballistic electron emission microscopy (BEES) characteristics (IB/V) were measured on individual QDs. Derivation corresponds to the density of states. Minima in the density of states are assigned to the positions of the quantum levels in the QD. The spectroscopic characteristics of individual QDs were examined. One-electron p1-like state, one-electron and two-electron ground states and excited two-electron states were found. The Coulomb interaction and exchange energies between two electrons in QDs were also determined.
Trvalý link: http://hdl.handle.net/11104/0006668