EPITAXIAL OVERGROWTH OF InP and GaAs MICROPORES, MICROCAVITIES AND MICROLAMELLAS BY InAs AND InGaAs

0356059 - ÚFE 2012 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Nohavica, Dušan - Grym, Jan - Hulicius, Eduard - Pangrác, Jiří - Gladkov, Petar - Jarchovský, Zdeněk
EPITAXIAL OVERGROWTH OF InP and GaAs MICROPORES, MICROCAVITIES AND MICROLAMELLAS BY InAs AND InGaAs.
CONFERENCE PROCEEDINGS NANOCON 2010. Ostrava: TANGER, 2010 - (Zbořil, R.), s. 28-33. ISBN 978-80-87294-19-2.
[NANOCON 2010. International Conference /2./. Olomouc (CZ), 12.10.2010-14.10.2010]
Výzkumný záměr: CEZ:AV0Z20670512; CEZ:AV0Z10100521
Klíčová slova: A3B5 * micropores * heteroepitaxy
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Structural and optical properties of micro and nano-porous InP and GaAs substrates used for an epitaxial overgrowth of thin films were investigated. Both crystalographically oriented (CO) and current line oriented (CLO) pore networks were created by electrochemical dissolution. Heat treatment of InP pores at 650oC and GaAs pores at 750-850oC converted them into microcavities The capability of improved structural quality homo- and hetero-epitaxially overgrown films on the porous InP, was also demonstrated by LPE growth of InP and InAs and GaInAs on GaAs by MOVPE technology.
Trvalý link: http://hdl.handle.net/11104/0194679