X-ray diffraction analysis of multilayer porous InP(001) structure

0351779 - ÚFE 2011 RIV RU eng J - Článek v odborném periodiku
Lomov, A. A. - Punegov, V. I. - Vasil'ev, A. L. - Nohavica, Dušan - Gladkov, Petar - Kartsev, A. A. - Novikov, D. V.
X-ray diffraction analysis of multilayer porous InP(001) structure.
Crystallography Reports. Roč. 55, č. 2 (2010), s. 182-190. ISSN 1063-7745. E-ISSN 1562-689X
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: silicon layers * INP
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 0.644, rok: 2010

The porous structures were formed by anodic oxidation of InP(001) substrates in aqueous HCl solution. The structural parameters of the sublayers were varied by changing the electrochemical etching mode (potentiostatic/galvanostatic). The X-ray scattering intensity maps near the InP 004 reflection are obtained. A model for scattering from such systems is proposed based on the statistical dynamical diffraction theory. Theoretical scattering maps have been fitted to the experimental ones. It is shown that a mathematical analysis of the scattering intensity maps makes it possible to determine the structural parameters of sublayers. The reconstructed parameters (thickness, strain, and porosity of sublayers and the shape and arrangement of pores) are in satisfactory agreement with the scanning electron microscopy data.
Trvalý link: http://hdl.handle.net/11104/0191457