Oxygen assisted photoinduced changes in Ge39Ga2S59 amorphous thin film

0350257 - ÚMCH 2011 RIV NL eng J - Článek v odborném periodiku
Knotek, P. - Kincl, Miloslav - Tichý, Ladislav - Arsova, D. - Ivanova, Z.G. - Tichá, H.
Oxygen assisted photoinduced changes in Ge39Ga2S59 amorphous thin film.
Journal of Non-Crystalline Solids. Roč. 356, 50-51 (2010), s. 2850-2857. ISSN 0022-3093. E-ISSN 1873-4812
Výzkumný záměr: CEZ:AV0Z40500505
Klíčová slova: amorphous chalcogenide films * photooxidation * AFM
Kód oboru RIV: CA - Anorganická chemie
Impakt faktor: 1.483, rok: 2010
http://www.sciencedirect.com/science/article/B6TXM-51777S1-1/2/1b7e3c76f4a998f0a8b781ca56253799

Virgin GeGaS film is only a little bleached by the illumination with the band gap or over band gap photons while the film annealed in the argon is practically insensitive to such illumination. Illumination by UV photons leads to significant changes in the surface topology of the virgin or annealed film originated from the film oxidation, which is supported by Fourier transform infrared spectroscopy (Ge-O-Ge bridge), the Raman fearure (O3Ge-O-GeO2) and (iii) Atomic Force Microscopy (GeO2 microcrystalline particles).
Trvalý link: http://hdl.handle.net/11104/0190302