Deposition of Germanium Nanowires from Hexamethyldigermane: Influence of the Substrate Pretreatment

0346428 - ÚCHP 2011 RIV US eng J - Článek v odborném periodiku
Dřínek, Vladislav - Fajgar, Radek - Klementová, Mariana - Šubrt, Jan
Deposition of Germanium Nanowires from Hexamethyldigermane: Influence of the Substrate Pretreatment.
Journal of the Electrochemical Society. Roč. 157, č. 10 (2010), K218-K222. ISSN 0013-4651. E-ISSN 1945-7111
Grant CEP: GA ČR GA203/09/1088
Výzkumný záměr: CEZ:AV0Z40720504; CEZ:AV0Z40320502
Klíčová slova: germanium nanovires * chemical vapor deposition * hexamethyldigermane
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie
Impakt faktor: 2.420, rok: 2010

Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 was used for synthesis of Germanium Nanowires (GeNWs). Pressure during the deposition process was maintained at 90-100 Pa and temperature fixed at 490 °C. GeNWs of several nanometers in diameter and a few microns in length were deposited on various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Si and SiO2 substrates were modified by sputtering Ge to promote GeNW growth. Influence of surface pretreatment (surface roughness or Ge sputtering) is discussed in respect to the previous published theory of intermetalic solution. The results conclude that another mechanism should be taken into account – sticking of oncoming Ge based fragments, clusters etc. on the substrate surface, their nucleation and formation of Ge seeds appropriate for initiation of the GeNW growth. Samples were studied by SEM with EDX, (HR)TEM, FTIR and Raman spectroscopy.
Trvalý link: http://hdl.handle.net/11104/0187459