Detectors of Gamma Rays and Alpha Particles Based on Ta-Doped InP Converted to the Semi-Insulating State by Annealing

0341437 - ÚFE 2010 RIV US eng J - Článek v odborném periodiku
Žďánský, Karel - Gorodynskyy, Vladyslav - Pekárek, Ladislav
Detectors of Gamma Rays and Alpha Particles Based on Ta-Doped InP Converted to the Semi-Insulating State by Annealing.
IEEE Transactions on Nuclear Science. Roč. 56, č. 5 (2009), s. 2997-3001. ISSN 0018-9499. E-ISSN 1558-1578
Grant CEP: GA AV ČR KAN400670651; GA AV ČR(CZ) KAN401220801; GA AV ČR IBS2067354
Výzkumný záměr: CEZ:AV0Z20670512; CEZ:AV0Z10100520
Klíčová slova: radiation detection * semiconductor doping * crystal growth
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.591, rok: 2009

InP crystals were synthesized with a Ta admixture grown by the Czochralski technique, and wafers cut from the grown crystals were converted to the SI state by high-temperature annealing. The good detection performance of such material-based detectors has been tested with alpha-particles from a Am-241 source (5.48 MeV). The charge collection efficiency (CCE) of 84% and relative energy resolution at full width at half maximum (FWHM) of 5% were obtained at room temperature 295 K (RT). Low-energy gamma-photons of 122 keV from a Co-57 source and gamma-photons from a Cs-137 source were detected at 242 K, 272 K, and 295 K, respectively. The values of CCE 88% and FWHM 16 keV of 122 keV photons and CCE 87% and FWHM 48 keV of gamma-photons of 662 keV were obtained at reduced temperatures. A pulse-height spectrum of 662 keV gamma-photons registered at room temperature is also shown in this work.
Trvalý link: http://hdl.handle.net/11104/0184434