Počet záznamů: 1
Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation
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SYSNO 0576333 Title Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation Author(s) Ji, Y. (GB)
Frentrup, M. (GB)
Zhang, X. (GB)
Pongrácz, Jakub (UFM-A) ORCID
Fairclough, S. M. (GB)
Liu, Y. (GB)
Zhu, T. (GB)
Oliver, Rachel A. (GB)Source Title Journal of Applied Physics. Roč. 134, č. 14 (2023). - : AIP Publishing Article number 145102 Document Type Článek v odborném periodiku Institutional support UFM-A - RVO:68081723 Language eng Country US Keywords InGaN * MQW * porosification * AFM * XRD * strain relaxation Cooperating institutions Vysoké učení technické v Brně (Czech Republic) URL https://pubs.aip.org/aip/jap/article/134/14/145102/2916034/Porous-pseudo-substrates-for-InGaN-quantum-well Permanent Link https://hdl.handle.net/11104/0345962
Počet záznamů: 1