Počet záznamů: 1
Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation
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SYSNO ASEP 0576333 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation Tvůrce(i) Ji, Y. (GB)
Frentrup, M. (GB)
Zhang, X. (GB)
Pongrácz, Jakub (UFM-A) ORCID
Fairclough, S. M. (GB)
Liu, Y. (GB)
Zhu, T. (GB)
Oliver, Rachel A. (GB)Celkový počet autorů 8 Číslo článku 145102 Zdroj.dok. Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
Roč. 134, č. 14 (2023)Poč.str. 10 s. Forma vydání Tištěná - P Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova InGaN ; MQW ; porosification ; AFM ; XRD ; strain relaxation Vědní obor RIV BM - Fyzika pevných látek a magnetismus Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) Způsob publikování Open access Institucionální podpora UFM-A - RVO:68081723 UT WOS 001083993400005 EID SCOPUS 85174829301 DOI https://doi.org/10.1063/5.0165066 Anotace Strain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopt ing a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemical
etching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. The
degree of strain relaxation in MQWs was studied by x-ray reciprocal space mapping, which shows an increase of the in-plane lattice constant
with the increase of etching voltage used in fabricating the pseudo-substrate. The reduced strain in the InGaN SL pseudo-substrate was dem onstrated to be transferable to InGaN MQWs grown on top of it, and the engineering of the degree of strain relaxation via porosification
was achieved. The highest relaxation degree of 44.7% was achieved in the sample with the porous InGaN SL template etched under the
highest etching voltage. Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the com bination of atomic force and transmission electron microscopy. The increased porosity of the InGaN SL template and the newly formed
small V-pits during QW growth are suggested as possible origins for the increased strain relaxation of InGaN MQWs.Pracoviště Ústav fyziky materiálu Kontakt Yvonna Šrámková, sramkova@ipm.cz, Tel.: 532 290 485 Rok sběru 2024 Elektronická adresa https://pubs.aip.org/aip/jap/article/134/14/145102/2916034/Porous-pseudo-substrates-for-InGaN-quantum-well
Počet záznamů: 1