Počet záznamů: 1  

Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation

  1. 1.
    SYSNO ASEP0576333
    Druh ASEPJ - Článek v odborném periodiku
    Zařazení RIVJ - Článek v odborném periodiku
    Poddruh JČlánek ve WOS
    NázevPorous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation
    Tvůrce(i) Ji, Y. (GB)
    Frentrup, M. (GB)
    Zhang, X. (GB)
    Pongrácz, Jakub (UFM-A) ORCID
    Fairclough, S. M. (GB)
    Liu, Y. (GB)
    Zhu, T. (GB)
    Oliver, Rachel A. (GB)
    Celkový počet autorů8
    Číslo článku145102
    Zdroj.dok.Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
    Roč. 134, č. 14 (2023)
    Poč.str.10 s.
    Forma vydáníTištěná - P
    Jazyk dok.eng - angličtina
    Země vyd.US - Spojené státy americké
    Klíč. slovaInGaN ; MQW ; porosification ; AFM ; XRD ; strain relaxation
    Vědní obor RIVBM - Fyzika pevných látek a magnetismus
    Obor OECDCondensed matter physics (including formerly solid state physics, supercond.)
    Způsob publikováníOpen access
    Institucionální podporaUFM-A - RVO:68081723
    UT WOS001083993400005
    EID SCOPUS85174829301
    DOI https://doi.org/10.1063/5.0165066
    AnotaceStrain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopt ing a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemical
    etching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. The
    degree of strain relaxation in MQWs was studied by x-ray reciprocal space mapping, which shows an increase of the in-plane lattice constant
    with the increase of etching voltage used in fabricating the pseudo-substrate. The reduced strain in the InGaN SL pseudo-substrate was dem onstrated to be transferable to InGaN MQWs grown on top of it, and the engineering of the degree of strain relaxation via porosification
    was achieved. The highest relaxation degree of 44.7% was achieved in the sample with the porous InGaN SL template etched under the
    highest etching voltage. Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the com bination of atomic force and transmission electron microscopy. The increased porosity of the InGaN SL template and the newly formed
    small V-pits during QW growth are suggested as possible origins for the increased strain relaxation of InGaN MQWs.
    PracovištěÚstav fyziky materiálu
    KontaktYvonna Šrámková, sramkova@ipm.cz, Tel.: 532 290 485
    Rok sběru2024
    Elektronická adresahttps://pubs.aip.org/aip/jap/article/134/14/145102/2916034/Porous-pseudo-substrates-for-InGaN-quantum-well
Počet záznamů: 1  

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