Počet záznamů: 1
InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
- 1.Hazdra, P. - Oswald, Jiří - Atef, M. - Kuldová, Karla - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří
InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 147, - (2008), s. 175-178. ISSN 0921-5107. E-ISSN 1873-4944
Grant CEP: GA AV ČR IAA100100719; GA AV ČR KJB101630601; GA ČR GA202/06/0718
http://hdl.handle.net/11104/0159792
Počet záznamů: 1