Počet záznamů: 1
Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE
- 1.Agert, C. - Gladkov, Petar - Bett, A. W.
Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE.
Semiconductor Science and Technology. Roč. 17, č. 1 (2002), s. 39-46. ISSN 0268-1242. E-ISSN 1361-6641
Impakt faktor: 1.241, rok: 2002
http://hdl.handle.net/11104/0114099
Počet záznamů: 1